| 摘要 |
Provided is a method for semiconductor device. In formation of a RCAT (Recess Channel Array Transistor) for increasing a channel length of a gate, that is, a recess gate, a gate polysilicon layer is formed while a pad nitride film pattern is not removed, and then a gate having a narrower line-width than that of a recess gate region is formed so as to improve a process margin, prevent generation of parasite capacitors and reduce leakage current, thereby improving electric characteristics of a semiconductor device.
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