| 摘要 |
A semiconductor device includes a plurality of fins formed over the substrate in parallel, the fins including a first fin and a second fin adjacent to the first fin, a gate electrode formed over the substrate, the gate electrode covering a portion of the fins, and a semiconductor layer formed over the fins, the semiconductor layer electrically connecting the first fin and the second fin, the semiconductor layer and the fins forming a source region and a drain region including an impurity ion.
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