PERYLENE IMIDE/DIIMIDE BASED ORGANIC FIELD EFFECT TRANSISTORS-OFETS AND A METHOD OF PRODUCING THE SAME

摘要

This invention relates to a method of solution-processed construction of ambipolar, air stable organic field-effect transistors (OFETs) based on perylene diimide/imide derivatives that absorb in visible region and the product obtained therefrom. The synthesis, design and application of ambipolar organic field-effect transistors (OFETs) based on N,N'-bis(dehydroabietyl)-3,4,9,10-perylene diimide (PDI) derivative has shown electron mobility, µ_e ~ 7 x 10^-5 cm².V^-1.s^-1 and hole mobility,µ_h ~ 8 x 10^-5 cm².V^-1.s^-1. Less soluble, air stable, unipolar n-channel OFET based on N-(cyclohexyl) perylene-3,4,9,10-tetracarboxylic-3,4-anhydride-9,10-imide showed an electron mobility of µ_e ~ 10^-5 cm².V^-1.s^-1.