| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a high degree of integration and a method for manufacturing the semiconductor device. <P>SOLUTION: A multichip module 100 which is a semiconductor device provided with a plurality of semiconductor chips 102 comprises a first semiconductor chip 102a provided with a first bonding pad 105a, a second semiconductor chip 102b provided with a second bonding pad 105b thinner than the first bonding pad 105a, and a bonding wire 106 respectively joined with the first and second bonding pads 105a, 105b. The first bonding pad 105a is joined with the first bonding side end of the bonding wire 106, and the second bonding pad 105b is joined with the second bonding side end of the bonding wire 106. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
