| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method both with an excellent reliability wherein, since in a conventional lamination package, a semiconductor element is completely covered with a resin, a package thickness is thick, heat-dissipating properties are bad, and a reduction in a reliability such as a gold wire exposure due to a die pad shift or a characteristic failure due to a contact between the gold wire and a semiconductor element is caused, and from this viewpoint, the back face of the semiconductor element is exposed, thereby reducing a thickness, improving the heat-dissipating properties, and dissolving a malfunction of the die pad shift. SOLUTION: This semiconductor device comprises laminated semiconductor elements 2a, 2b; a lead frame having an inner lead 5; first and second wires 6 which connect the semiconductor element 2a with the semiconductor element 2b and connect the semiconductor elements 2a, 2b with the inner lead 5 of the lead frame; and a sealing resin body 1 for sealing the inner lead 5 of the lead frame, the semiconductor elements 2a, 2b, the first wire 6, and the second wire 6. The back face of the semiconductor element 2a and a part of the lead frame are exposed. COPYRIGHT: (C)2006,JPO&NCIPI
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