METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal substrate which exhibits no zone affected by surface treatment or residue or surface roughness caused by the removal of ion damage and has a surface exhibiting a high degree of cleanness and flatness. SOLUTION: The method for manufacturing the silicon carbide single crystal substrate has a process for removing zones affected by treatment on the surface of the silicon carbide single crystal substrate by etching by using reactive gas excluding fluorine base gas. COPYRIGHT: (C)2006,JPO&NCIPI