| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein all gate electrodes are alloyed (full silicide) and alloying reaction is suppressed in source and drain areas, and generation of joint leak is prevented, and also to provide a method for manufacturing the same. SOLUTION: A gate electrode is formed on a semiconductor substrate 1 with a gate insulting film 2 in-between, and then a side wall insulating film 4 is formed on the side wall of the gate electrode. A source and drain area 6 is formed by ion implantation while the gate electrode and the side wall insulating film 4 are being used. Then, a high-melting-point metal film 8 is accumulated on the semiconductor substrate 1 so as to cover the gate electrode, and it is annealed. During the annealing treatment, electromagnetic waves that have larger energy than the band gap of the gate electrode material are applied to the substrate 1. Thus, a full silicide gate electrode 3a is formed, and a shallow silicide layer 7a is formed in the drain layer 6. COPYRIGHT: (C)2006,JPO&NCIPI
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