发明名称 |
Field effect transistor, electrical device array and method for manufacturing those |
摘要 |
A field effect transistor of the present invention includes: a gate electrode formed on a substrate; a gate insulation layer formed on the gate electrode: a source electrode and a drain electrode that are formed on the gate insulation layer; a n-type semiconductor layer including carbon nanotube, formed between the source electrode and the drain electrode so as to contact with the source electrode and the drain electrode; and a n-type modifying polymer layer formed on the n-type semiconductor layer, the n-type modifying polymer layer being for converting a polarity of the carbon nanotube from an original polarity of p-type into n-type and for stabilizing the polarity. The semiconductor characteristics of CNT are converted concurrently with the formation of the semiconductor protective layer, whereby the manufacturing process can be simplified. Thereby, a CNT-FET circuit that is stable even in the air can be provided.
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申请公布号 |
US2006214192(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20050553860 |
申请日期 |
2005.10.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NANAI NORISHIGE;TAKEUCHI TAKAYUKI |
分类号 |
H01L29/76;H01L29/786;H01L51/00;H01L51/05 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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