发明名称 Method of manufacturing semiconductor device
摘要 A method of manufacturing a semiconductor device includes a step of preparing a first chip having a plurality of first pads and a second chip having a plurality of second pads, a step of forming a first bump electrode on one of the plurality of first pads by a wire fed out from a capillary, a step of forming a first wire electrically connecting one of the first bump electrode and one of the plurality of second pads by the wire fed out from the capillary after the step of forming the first bump electrode, and a step of forming a second bump electrode on another of the plurality of first pads by the wire fed out from the capillary after the step of forming the first wire.
申请公布号 US2006216863(A1) 申请公布日期 2006.09.28
申请号 US20060347231 申请日期 2006.02.06
申请人 RENESAS TECHNOLOGY CORP. 发明人 ARAKAWA HIDEYUKI
分类号 H01L21/00 主分类号 H01L21/00
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