发明名称 |
METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTEM AND DEPOSITION METHODS INCLUDING THE SAME |
摘要 |
A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
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申请公布号 |
US2006216416(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20030414787 |
申请日期 |
2003.04.16 |
申请人 |
SUMAKERIS JOSEPH J;PAISLEY MICHAEL J;O'LOUGHLIN MICHAEL J |
发明人 |
SUMAKERIS JOSEPH J.;PAISLEY MICHAEL J.;O'LOUGHLIN MICHAEL J. |
分类号 |
C23C16/00;C23C16/44;C23C16/455 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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