发明名称 METHODS FOR CONTROLLING FORMATION OF DEPOSITS IN A DEPOSITION SYSTEM AND DEPOSITION METHODS INCLUDING THE SAME
摘要 A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
申请公布号 US2006216416(A1) 申请公布日期 2006.09.28
申请号 US20030414787 申请日期 2003.04.16
申请人 SUMAKERIS JOSEPH J;PAISLEY MICHAEL J;O'LOUGHLIN MICHAEL J 发明人 SUMAKERIS JOSEPH J.;PAISLEY MICHAEL J.;O'LOUGHLIN MICHAEL J.
分类号 C23C16/00;C23C16/44;C23C16/455 主分类号 C23C16/00
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