OPTOELECTRIC CONVERSION ELEMENT AND ITS MANUFACTURING METHOD, AND OPTOELECTRIC CONVERSION MODULE USING SAME

摘要

An optoelectric conversion element comprising a p-type crystalline Si semiconductor (5), n-type semiconductor (4) to form a pn junction portion by joining the crystalline Si semiconductor (5) thereto , an electrode (1) provided on the n-type semiconductor (4), and a depletion region (10) formed in the crystalline Si semiconductor (5) and n-type semiconductor (4) across the pn junction portion. In the depletion region (10), the region (5b)in the crystalline Si semiconductor (5) is divided into a first depletion region (5b1) below the electrode (1) when viewed from the electrode (1) side and a second depletion region (5b2) other than the first depletion region. The concentration of oxygen at least in the first depletion region (5b1) is lower than 1E18 [atoms/cm³]. A solar cell having the electrode (1) subjected to firing has high characteristics and high yield.