SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a plurality of MOS transistors (12), each including a gate electrode (20) formed on a semiconductor substrate (10) via a gate insulation film (18), a source diffusion layer (28) and a drain diffusion layer (34) of the second conductive type formed at both sides of the gate electrode (20) in the semiconductor substrate (10) and arranged to sandwich a channel region (36) of the first conductive type. The source diffusion layers (28) and the drain diffusion layers (34) of the MIS transistors (12) are arranged in the same direction. A pocket region of the first conductive type is selectively formed between the source diffusion layers (28) and the channel regions (36) of the respective MIS transistors (12). A pocket non-implanted region is formed between the drain diffusion layers (34) and the channel regions (36) of the respective MIS transistors (12).