| 摘要 |
<p>After forming a ferroelectric film and an upper electrode film on a lower electrode film (9), an upper electrode (11a) is formed by patterning the upper electrode film. Then, a capacitor insulating film (10a) is formed by performing ferroelectric film patterning, including over etching. At this time, a surface layer part of the lower electrode film (9) is etched by over etching, particles and the like scattered from the surface layer part adhere on the side part and the like of the capacitor insulating film (10a), and a layer (51) having conductivity is formed. Then, the layer (51) is removed by performing etch-back to the entire plane by plasma etching and the like. The etch-back is performed with a low power in a short time.</p> |
