发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
Disclosed is a film-forming apparatus which enables to suppress generation of particles and to reduce the workload of the cleaning process. Specifically disclosed is a film- forming apparatus for forming a thin film (15) on a substrate (6) by supplying a gas (13) through a gas nozzle (14) into a vacuum chamber (1) and transforming the gas (13) into a plasma by applying a current to a high-frequency antenna (7). In this film-forming apparatus, a ceramic inner cylinder (20) is so arranged that only a small area of the cylinder is in contact with the vacuum chamber (1) for preventing adhesion of the film-forming component onto the inner wall of the vacuum chamber (1).
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申请公布号 |
KR20060103341(A) |
申请公布日期 |
2006.09.28 |
申请号 |
KR20067012570 |
申请日期 |
2006.06.23 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
KAWANO YUICHI;SHIMAZU TADASHI;NISHIMORI TOSHIHIKO;YOSHIDA KAZUTO |
分类号 |
H01L21/205;C23C16/44;H01J37/32;H01L21/31 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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