发明名称 PLASMA PROCESSING APPARATUS
摘要 Disclosed is a film-forming apparatus which enables to suppress generation of particles and to reduce the workload of the cleaning process. Specifically disclosed is a film- forming apparatus for forming a thin film (15) on a substrate (6) by supplying a gas (13) through a gas nozzle (14) into a vacuum chamber (1) and transforming the gas (13) into a plasma by applying a current to a high-frequency antenna (7). In this film-forming apparatus, a ceramic inner cylinder (20) is so arranged that only a small area of the cylinder is in contact with the vacuum chamber (1) for preventing adhesion of the film-forming component onto the inner wall of the vacuum chamber (1).
申请公布号 KR20060103341(A) 申请公布日期 2006.09.28
申请号 KR20067012570 申请日期 2006.06.23
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 KAWANO YUICHI;SHIMAZU TADASHI;NISHIMORI TOSHIHIKO;YOSHIDA KAZUTO
分类号 H01L21/205;C23C16/44;H01J37/32;H01L21/31 主分类号 H01L21/205
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