发明名称 SOLID-STATE IMAGE SENSING DEVICE, ITS MANUFACTURING METHOD AND IMAGING DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To improve sensitivity and to prevent an adjacent pixel from being mixed with colors by providing a reflection film which covers a read-out gate electrode. <P>SOLUTION: A plurality of unit pixels are arranged including an active device which changes and outputs signal electric charge by which photoelectric conversion is carried out to an electric signal by a photoelectric conversion element 111. A solid-state image sensing device 1 is provided with a wiring layer 130 which serves as wiring 131 to an active device, on the other side of an element layer 110 where a photoelectric conversion element 111 is formed so as to make an incidence light L penetrate a color filter 150 formed at the other side of the element layer 110 and make it enter into the photoelectric conversion element 111. It has a reflection film 140 formed so that the whole pixel surface including a read-out gate electrode 121 which reads signal electric charge where the photoelectric conversion of the active devices is carried out to the wiring layer 130 side of the element layer 110 via an insulating film 141 may be covered. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006261372(A) 申请公布日期 2006.09.28
申请号 JP20050076498 申请日期 2005.03.17
申请人 SONY CORP 发明人 NATORI TAICHI
分类号 H01L27/146;H01L27/14;H04N5/335;H04N5/369;H04N5/374;H04N9/07 主分类号 H01L27/146
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