METHOD OF TRANSFERRING THIN LAYER FORMED IN SUBSTRATE WITH VACANCY CLUSTERS

摘要

PROBLEM TO BE SOLVED: To provide a method of transferring a thin layer formed in a substrate with vacancy clusters. SOLUTION: A substrate comprises a thin layer made of a semiconductor material which is obtained as a result of transferring a portion of a donor substrate having a first density of vacancy clusters, and a supporting substrate. The method of transferring this layer comprises: a step of performing curing after the transfer of the portion from the donor substrate to the supporting substrate, so as to reduce the first density of vacancy clusters present in the portion to a second density; and one or more steps performed prior to the curing step so as not to increase the vacancy clusters present in the portion of the donor substrate at the first density. Also, an SeOI substrate is obtained by this method and a process of recycling a substrate with vacancy clusters which was used as a donor substrate from which a thin layer was taken and transferred onto a supporting substrate. COPYRIGHT: (C)2006,JPO&NCIPI