SILICON CARBIDE SEMICONDUCTOR, ITS MANUFACTURING METHOD AND MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor doped with impurity nitrogen at high accuracy uniformly in the plane and having wide area. SOLUTION: A silicon carbide semiconductor manufacturing method uses epitaxial growth to grow the crystal of silicon carbide and dopes the inside of it with nitrogen. The silicon carbide semiconductor manufacturing method has a pre-heating step for performing thermal decomposition in advance, before introducing the gas of a nitrogen compound supplied as a nitrogen source onto a substrate where the crystal of silicon carbide is formed. The silicon carbide semiconductor manufacturing method has the pre-heating step allowing the gas of the nitrogen compound to flow inside a chamber at 1,300°C or higher. COPYRIGHT: (C)2006,JPO&NCIPI