发明名称 SOLID STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA
摘要 PROBLEM TO BE SOLVED: To meet the requirement for integration of a device and to widen dynamic range. SOLUTION: A pixel comprises: a photoelectric converter 101 in which electric charges are generated by photoelectric conversion and accumulated; a charge holder 102 which accumulates charges overflowing from the photoelectric converter 101 while the photoelectric converter 101 generates and accumulates electric charges; a source follower amplifier SF-MOS for amplifying electric charges; a transfer MOS transistor Tx-MOS which transfers charges accumulated in the photoelectric converter 101 to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS which transfers electric charges accumulated in the charge holder 102 to the source follower amplifier SF-MOS, and forms the charge holder 102 of trench structure. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006261597(A) 申请公布日期 2006.09.28
申请号 JP20050080346 申请日期 2005.03.18
申请人 CANON INC 发明人 MISHIMA RYUICHI;TAMURA SEIICHI;TAZOE KOICHI
分类号 H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374 主分类号 H01L27/146
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