SILICON SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To easily provide a p-type silicon semiconductor substrate exhibiting a high mechanical strength by providing precipitated oxygen by which diffusion of slips can be suppressed in the manufacturing process. SOLUTION: The p-type silicon semiconductor substrate contains less than 1×1018atoms/cm3of boron. With respect to diffusion of oxygen in silicon semiconductor, the silicon semiconductor is heated at a temperature and for a time for achieving a diffusion length equal to or more than that which is achieved for 2-25 hours at a temperature converted to 1,100°C. Letting the heating time at a temperature converted to 1,100°C be t (hours), the silicon semiconductor contains oxygen in a concentration which is determined by a formula (a): [Oi](atoms/cm3)≥(1.94×t-0.16)×1018. COPYRIGHT: (C)2006,JPO&NCIPI