| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor capacitor wherein the deterioration of a breakdown voltage yield and the deterioration of the life of an insulating film can be prevented. SOLUTION: In the semiconductor capacitor 1, the plan layout of a trench 5 is made to be an annular square closed loop without an open end. Consequently, a stress concentration etc. to a trench structure is alleviated upon the formation of the trench 5, and the occurrence of a crystal defect in the semiconductor substrate 2 can be prevented. Thus, the deterioration of the breakdown voltage yield of the insulating film 6 formed on a semiconductor substrate 2 can be prevented, and the deterioration of the life of the insulating film 6 can be prevented in the semiconductor capacitor 1. COPYRIGHT: (C)2006,JPO&NCIPI
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