发明名称 |
Gallium nitride semiconductor light emitting device and method of manufacturing the same |
摘要 |
A gallium nitride semiconductor LED includes a substrate for growing a GaN semiconductor material, an n-type GaN clad layer formed on the substrate and doped with Al, an active layer having a quantum well structure formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer.
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申请公布号 |
US2006215256(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20060443376 |
申请日期 |
2006.05.31 |
申请人 |
LEE JAE H;LEE JUNG H;KIM JE W |
发明人 |
LEE JAE H.;LEE JUNG H.;KIM JE W. |
分类号 |
H01S3/00;H01L21/00;H01L21/20;H01L21/205;H01L33/06;H01L33/12;H01L33/32 |
主分类号 |
H01S3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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