High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods

摘要

The present invention provides a semiconductor structure that includes a high performance field effect transistor (FET) on a semiconductor-on-insulator (SOI) in which the insulator thereof is a stress-inducing material of a preselected geometry. Such a structure achieves performance enhancement from uniaxial stress, and the stress in the channel is not dependent on the layout design of the local contacts. In broad terms, the present invention relates to a semiconductor structure that comprises an upper semiconductor layer and a bottom semiconductor layer, wherein said upper semiconductor layer is separated from said bottom semiconductor layer in at least one region by a stress-inducing insulator having a preselected geometric shape, said stress-inducing insulator exerting a strain on the upper semiconductor layer.