摘要 |
A method for plasma-enhanced cleaning of a system component (21, 25, 26, 35, 94, 104, 112, 116, 126) in a batch-type processing system and a method for monitoring and controlling the cleaning. The cleaning is performed by introducing a cleaning gas in a process chamber (10, 102) of the batch-type processing system (1, 100), forming a plasma by applying power to a system component (21, 25, 26, 35, 94, 104, 112, 116, 126) within the process chamber (10, 102), exposing a material deposit in the process chamber (10, 102) to the plasma to form a volatile reaction product, and exhausting the reaction product from the processing system (1, 100). Monitoring of the processing system (1, 100) can be carried out to determine cleaning status of the processing system (1, 100) and based upon the status from the monitoring, the processing system (1, 100) is controlled for either continuing the exposing and monitoring or stopping the cleaning process. A batch-type processing system (1, 100) is provided that allows plasma-enhanced cleaning of system components (21, 25, 26, 35, 94, 104, 112, 116, 126), and a system (1, 100) is provided with monitoring and controlling capability.
|
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON AMERICA, INC.;KOSTENKO, JOHN, WILLIAMS;O'MEARA, DAVID, L. |
发明人 |
KOSTENKO, JOHN, WILLIAMS;O'MEARA, DAVID, L. |