| 摘要 |
PROBLEM TO BE SOLVED: To provide high-density organic semiconductor equipment which can be driven with low power consumption. SOLUTION: In this organic semiconductor equipment, a plurality of organic transistors are formed on both surfaces of a sheet-like substrate consisting of plastic. Each organic transistor comprises a source electrode and a drain electrode which are electrically separately formed on the surface of the substrate, an organic semiconductor layer formed on the surface of the substrate to include these electrodes, a gate insulating film formed on the surface of this organic semiconductor layer, and a gate electrode formed on the gate insulating film including a channel region between the source electrode and the drain electrode. Further, the source electrodes or the drain electrodes of desired transistors from among the plurality of organic transistors arranged oppositely sandwiching the substrate are electrically connected through a via-fill formed through the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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