发明名称 Process for forming a planar diode using one mask
摘要 A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
申请公布号 US2006214184(A1) 申请公布日期 2006.09.28
申请号 US20050090708 申请日期 2005.03.25
申请人 发明人 WANG BENSON;LU KEVIN;CHIANG WARREN;CHEN MAX
分类号 H01L29/00 主分类号 H01L29/00
代理机构 代理人
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