<p>A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.</p>
申请公布号
WO2006101619(A2)
申请公布日期
2006.09.28
申请号
WO2006US05016
申请日期
2006.02.14
申请人
TOKYO ELECTRON LIMITED;ISHIZAKA, TADAHIRO;LUDVIKSSON, AUDUNN