Improvements relating to the formation of p-n junctions in semi-conductor material,申请号GB19570012070-传众专利搜索

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发明名称	Improvements relating to the formation of p-n junctions in semi-conductor material
摘要
申请公布号	GB886232(A)	申请公布日期	1962.01.03
申请号	GB19570012070	申请日期	1957.04.12
申请人	ASSOCIATED ELECTRICAL INDUSTRIES LIMITED	发明人	CHICK DOUGLAS RICHARD;HUNT STANLEY ERNEST
分类号	H01L21/00;H01L21/261	主分类号	H01L21/00
代理机构		代理人
主权项
地址

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