| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a dimensional precisision as a whole semiconductor device by reducing the influences of a proximity effect due to optical interference, and reducing the influences of aberration of a projection lens such as including coma aberration. <P>SOLUTION: In the method for forming the pattern, a plurality of gate patterns 204 parallel to one another are formed on a resist 200 in a predetermined circuit block region 102 by exposure through a phase shift mask having apertures with two kinds of inverted phases. When the spacing between adjacent gate patterns 204 exceeds a preliminarily determined maximum allowable pitch, a virtual pattern 208 is laid between the adjacent gate patterns 204, the virtual pattern being parallel to the gate patterns 204 and at a distance smaller than the maximum allowable pitch; and phases in different types are alternately assigned between each gate pattern 204 and the virtual pattern 208 laid parallel to each other, in the arrangement direction of the patterns. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
