发明名称 Air-gap type FBAR, and duplexer using the FBAR
摘要 An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.
申请公布号 US2006214745(A1) 申请公布日期 2006.09.28
申请号 US20060429256 申请日期 2006.05.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK YUN-KWON;SONG IN-SANG;HA BYEOUNG-JU;SONG IL-JONG;KIM DUCK-HWAN
分类号 B81B3/00;H03H9/70;B81C1/00;H01L41/08;H01L41/09;H01L41/22;H03H3/02;H03H9/17;H03H9/58 主分类号 B81B3/00
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