发明名称 |
METHOD FOR DEPOSITION OF METAL LAYERS FROM METAL CARBONYL PRECURSORS |
摘要 |
A method (300) for increasing deposition rates of metal layers from metalcarbonyl precursors (52, 152) by mixing a vapor of the metal-carbonyl precursor (52, 152) with CO gas. The method (300) includes providing a substrate (25, 125) in a process chamber (10, 110) of a deposition system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate (25, 125, 400, 402) to the process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process. |
申请公布号 |
WO2006057709(A3) |
申请公布日期 |
2006.09.28 |
申请号 |
WO2005US35582 |
申请日期 |
2005.10.03 |
申请人 |
TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION;SUZUKI, KENJI;GUIDOTTI, EMMANUEL;LEUSINK, GERRIT, J.;MCFEELY, FENTON, R. |
发明人 |
SUZUKI, KENJI;GUIDOTTI, EMMANUEL;LEUSINK, GERRIT, J.;MCFEELY, FENTON, R. |
分类号 |
C23C16/16;H01L21/768 |
主分类号 |
C23C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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