ZINC OXIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element having a structure wherein internal quantum efficiency is improved by improving crystallinity of a semiconductor layer to be stacked, external quantum efficiency is also improved by taking out the emitted light to the external by permitting a substrate or the like to absorb the least emitted light, and light emitting efficiency is comprehensively improved, in the case of emitting a light having a short wavelength of 400nm or less. In the case of staking ZnO compound semiconductor layers (2-6) to form a light emitting layer forming section (7) for emitting the light having a wavelength of 400nm or less on a substrate (1), a substrate composed of Mg_xZn_1-xO (0