| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device preventing a crack from occurring on a ceramic substrate constituting an insulation substrate when the temperature of the semiconductor device varies. <P>SOLUTION: The semiconductor device includes the ceramic substrate 1 having a first principal plane and a second principal plane, the insulation substrate 10 having a first metallic conductor 2 fixed to the first principal plane and a second metallic conductor 3 fixed to the second principal plane, a semiconductor element 20 mounted on the first metallic conductor on the first principal plane, and a base plate 30 joined with the second metallic conductor on the second principal plane and mounting the insulation substrate. Further, the semiconductor device includes a joining region 4 where the second metallic conductor is fixed to the second principal plane and a non-joining region 6 provided around the joining region. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
