| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for metal, especially for copper metals and copper alloys, capable of manufacturing an LSI having a high CMP speed with reduced dishing and less occurrence of a portion left behind to be polished, and to provide a chemical mechanical polishing method using the same. <P>SOLUTION: The polishing solution for metal contains a compound represented by a general formula (I) and an oxidizing agent, and characterized by having pH2 to 8. In the general formula (I), R<SB>1</SB>and R<SB>2</SB>independently represent a carbon atom or a nitrogen atom respectively, but there is no possibility that R<SB>1</SB>and R<SB>2</SB>are simultaneously a nitrogen atom. Q<SB>1</SB>and Q<SB>2</SB>independently represent a divalent coupler that forms a heterocycle composed of 5 or 6 members by coupling with R<SB>1</SB>, R<SB>2</SB>, respectively. But, respective rings contain one to three nitrogen atoms, one ring formed by Q<SB>1</SB>together with R<SB>1</SB>and R<SB>2</SB>, and the other ring formed by Q<SB>2</SB>together with R<SB>1</SB>and R<SB>2</SB>. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
