发明名称 SEMICONDUCTOR IMAGING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor imaging apparatus supplying output having high sensitivity and low noise. SOLUTION: The semiconductor imaging apparatus comprises: a semiconductor substrate that has a number of pixels aligned in a matrix and comprises a first region including the charge storage region of a photodiode and floating diffusion; and a second region including a transistor having a gate electrode and a source/a drain; a first silicon oxide film that is formed on the semiconductor substrate, covers the surface of the charge storage region in the first region, and is formed as a side wall on a wall at a gate electrode side of at least a partial transistor at the second region; and a silicon nitride film that is formed at the upper portion of the first silicon oxide film, covers the source/drain of at least a partial transistor in the second region, and has an opening at least at one portion of the upper portion of the charge storage region in the first region. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006261355(A) 申请公布日期 2006.09.28
申请号 JP20050076221 申请日期 2005.03.17
申请人 FUJITSU LTD 发明人 OKAWA SHIGEMI;TAKEDA SHIGETOSHI;ISHIHARA YUKIHIRO;HAYASHI KAZUKI;NAORI NOBUHISA;CHIJIIWA MASAHIRO
分类号 H01L27/146 主分类号 H01L27/146
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