| 发明名称 |
PLASMA TREATMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
An insulation film on a substrate is subjected to a plasma treatment using a gas containing at least either of a CH-based gas and a CO-based gas, whereby variations in the dielectric constant of the insulation film and adsorption of water onto the insulation film can be suppressed.
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| 申请公布号 |
US2006216432(A1) |
申请公布日期 |
2006.09.28 |
| 申请号 |
US20060276780 |
申请日期 |
2006.03.14 |
| 申请人 |
OHSHIMA KEIJI;SAITO TAKAHIRO;NAGAHATA KAZUNORI |
发明人 |
OHSHIMA KEIJI;SAITO TAKAHIRO;NAGAHATA KAZUNORI |
| 分类号 |
H05H1/00 |
主分类号 |
H05H1/00 |
| 代理机构 |
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