发明名称 |
Plasma pre-treating surfaces for atomic layer deposition |
摘要 |
Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.
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申请公布号 |
US2006216932(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20060359884 |
申请日期 |
2006.02.21 |
申请人 |
KUMAR DEVENDRA;GOUNDAR KAMAL K;KEMELING NATHANAEL R;FUKUDA HIDEAKI;SPREY HESSEL;STOKHOF MAARTEN |
发明人 |
KUMAR DEVENDRA;GOUNDAR KAMAL K.;KEMELING NATHANAEL R.;FUKUDA HIDEAKI;SPREY HESSEL;STOKHOF MAARTEN |
分类号 |
H01L21/4763;H01L21/44 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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