| 摘要 |
In the method for fabricating a semiconductor device, a polysilicon film is patterned to form a gate electrode 16, and a high dielectric constant insulating film 14 on a silicon substrate 10 and a device isolation film 12 on both sides of the gate electrode 16 is removed by dry etching using plasmas of a mixed gas of a base protection gas which combines with silicon to form a protection layer for protecting the silicon substrate 10 and the device isolation film 12, and an etching gas for etching the high dielectric constant insulating film 14.
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