| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To effectively reduce a connecting resistance between a plug and a wiring as well as the dielectric constant of an insulating film. <P>SOLUTION: The semiconductor device 100 is provided with a wiring structure comprising a semiconductor substrate (not shown in Fig.); a first wiring 108 provided on the upper part of the semiconductor substrate and constituted of a copper-containing metal; a conductive first plug 114 provided on the upper part of the first wiring 108 so as to be connected to the first wiring 108; a copper silicide layer 111 provided in a region except the region provided with a first plug 114 in the upper part of the first wiring 108; a copper silicide layer 117 provided on the upper part of the first plug 114; and a first porous MSQ (Methylsilsesquioxane) film 105 formed across the side surface of the first wiring 108 to the side surface of the first plug 114 and covering the side surface of the first wiring 108, the upper part of the first wiring 108, and the side surface of the first plug 114. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
