High density semiconductor memory and method of making

摘要

A memory cell, array and device include cross-shaped active areas and polysilicon gate areas disposed over arm portions of adjacent cross-shaped active areas. The polysilicon gate areas couple word lines with capacitors associated with each arm portion of the cross-shaped active areas. Buried digit lines are coupled to body portions of the cross-shaped active areas. The word lines and digit lines provide a unique contact to each capacitor of the array of memory cells. Each memory cell has an area of 5 F². An electronic system and method for fabricating a memory cell are also disclosed.