发明名称 |
Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit |
摘要 |
Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a replacement process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.
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申请公布号 |
US2006214237(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20060418577 |
申请日期 |
2006.05.05 |
申请人 |
METZ MATTHEW V;DATTA SUMAN;KAVALIEROS JACK;DOCZY MARK L;BRASK JUSTIN K;CHAU ROBERT S |
发明人 |
METZ MATTHEW V.;DATTA SUMAN;KAVALIEROS JACK;DOCZY MARK L.;BRASK JUSTIN K.;CHAU ROBERT S. |
分类号 |
H01L29/94;H01L21/8238;H01L29/76 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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