Contact structure manufacture for dynamic random access memory, by forming contact openings on isolation layer on top of semiconductor substrate, annealing semiconductor substrate and filing contact openings with conductive material

摘要

The method involves forming an isolation layer (1) on the top surface of a semiconductor substrate, and then forming contact openings (2) by stripping the cell field area of the isolation layer. Dopants, which can be activated at high temperature, are implanted into the semiconductor substrate within the range of the contact openings. The dopants are activated for annealing the crystal defects on the semiconductor substrate. A metallic layer and coating layers are then formed on the semiconductor substrate. The contact openings are then annealed and filled with conductive material.