| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode structure that contributes to down-sizing a package of a semiconductor device. <P>SOLUTION: The semiconductor device 100 has a semiconductor substrate having a first major surface, a second major surface opposite to the first major surface, and side surfaces that electrically conductively couple to the major surfaces; a circuit region that lies on the semiconductor substrate near the first major surface, and is provided with a circuit contact terminal 104a; metal regions 106a to 106c that extend from the circuit contact terminal 104a on the first major surface onto the side surfaces of the semiconductor substrate, and are provided with exposed contact regions 108a to 108c on the side surfaces of the semiconductor substrate; and an insulating layer 110 arranged between the metal regions 106 and the semiconductor substrate, and having an opening to connect the circuit contact terminal 104a electrically to the metal region 106. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
