| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid photographing device excelling in its image characteristic and the manufacturing method thereof wherein the generation of its image defect can be suppressed enough even though forming at the same time on a single substrate by the application of a CMOS logic process the transistors included in its picture-element portion and its peripheral-circuit portion, and in addition to this, it can also deal with the fining of its picture element. SOLUTION: In the solid photographing device, a picture-element portion 7 and a peripheral-circuit portion 19 disposed in the periphery of the picture-element portion 7 are formed on a single substrate. Each picture element includes first and second transistors, and the peripheral-circuit portion 19 includes a plurality of third transistors. At least residual stresses generated under a transfer gate electrode 23a constituting the first transistor and under a gate electrode 23b constituting the second transistor are made not larger than 37 MPa. COPYRIGHT: (C)2006,JPO&NCIPI
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