| 摘要 |
PROBLEM TO BE SOLVED: To enhance throughput while assuring safety in hydrogen anneal using hydrogen gas or heavy hydrogen gas. SOLUTION: In a hydrogen annealer equipped with a pipe 46 for supplying hydrogen gas to a treatment chamber 36 of a wafer 1, and a main exhaust line 40 connected with a vacuum pump 41 and exhausting the treatment chamber 36, the main exhaust line 40 is provided with a variable flow control valve 42 for controlling the flow rate of exhaust gas, and the treatment chamber 36 is provided with a nitrogen gas supply line 50. After hydrogen annealing is performed, exhaust gas flow rate of nitrogen gas mixed with hydrogen having a concentration of 10-20% is controlled below 10 l/min by means of the variable flow control valve 42, and nitrogen gas is supplied directly to the vacuum pump 41 at a rate of 100 l/min while evacuating it through the main exhaust line by means of the vacuum pump 41. Since the concentration of nitrogen gas mixed with hydrogen becomes 2% or less on the secondary of the vacuum pump, the exhaust gas can be discharged to a general waste gas facility. COPYRIGHT: (C)2006,JPO&NCIPI
|
