| 摘要 |
PROBLEM TO BE SOLVED: To suppress an increase of thickness around a substrate, improve uniformity in forming a film, improve processing quality, and improve a yield. SOLUTION: A substrate processing apparatus includes a processing chamber 12 for storing a plurality of substrates, a heating means 11 for heating the substrates, a supply means 55 for supplying a required treatment gas from an arbitrary position in the processing chamber, and an exhaust means 67 for exhausting the gas in the processing chamber through an exhaust port 59 opened in the processing chamber at a position different from the position of supplying the treatment gas. A surface of a region adjacent to the vicinity of the supplying position of the treatment gas is treated so that surface area density of the region adjacent to the vicinity of the supplying position of the treatment gas is larger than surface area density of the region of the processing chamber adjacent to the vicinity of the exhaust port. COPYRIGHT: (C)2006,JPO&NCIPI
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