| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which gate capacity is reduced, and the destruction of a gate oxide film when large current flows can be prevented. SOLUTION: The semiconductor apparatus comprises an epitaxial layer 113, channel region 105 formed on the epitaxial layer, trench 103a extending from the surface of the channel region 105 to the epitaxial layer 113, gate oxide film 104 which covers the inner surface of the trench 103a, gate electrode 103 embedded inside the trench 103a, and buried oxide film 112 formed at a distance from the gate oxide film 104 below the gate electrode 103. COPYRIGHT: (C)2006,JPO&NCIPI
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