| 摘要 |
PROBLEM TO BE SOLVED: To rapidly form a high-quality film by using a material which is easily absorbed at a low temperature and has a large molecular weight in forming a thin film by atomic layer deposition. SOLUTION: By introducing a material gas 111 into a film formation chamber and turning the film formation chamber into a plasma-generated state, Si(OC<SB>2</SB>H<SB>5</SB>)<SB>4</SB>molecules being the material of the thin film are decomposed in a gas phase on a substrate generating material decomposed components, and a material molecule layer is formed (absorbed layer) 102 which is formed of the molecules of the generated material decomposed components absorbed on the silicon substrate 101. Since the molecules of the material decomposed components have smaller radii than those of the molecules of the material, the material is absorbed more rapidly by more absorption sites of the silicon substrate 101. Consequently, such a state that the material is absorbed by all the absorption sites of the silicon substrate 101 can be obtained in a shorter period of time. COPYRIGHT: (C)2006,JPO&NCIPI
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