SEMICONDUCTOR NANO MATERIAL DOPING METHOD USING NEUTRON TRANSMUTATION DOPING PROCESS

摘要

A semiconductor nano material doping method using a neutron transmutation doping process is provided to implement uniform dope to a nano wire by irradiating neutron to generate impurity atoms using a transmutation doping process. In a growth process, a semiconductor nano wire is grown on a substrate(110). In a doping process, the semiconductor nano wire is doped by irradiating neutron using a transmutation(120). In an anneal process, a thermal annealing is performed to the neutron doped semiconductor nano wire(130). In the doping process, the nano wire is doped with desired impurity concentration by controlling irradiation time of the neutron and quantity of the neutron.