Gallium nitride based semiconductor device

摘要

A method of producing a gallium nitride-type light emitting semiconductor device comprising the steps of growing GaN-type semiconductor epitaxial layers on a (0001) top surface gallium nitride single crystal substrate; forming an electrode on the GaN-type semiconductor epitaxial layers; forming an electrode on a bottom surface of the gallium nitride single crystal substrate; forming scribing lines on the bottom surface of the gallium nitride single crystal substrate along {1-100} planes of the gallium nitride single crystal substrate; cutting the gallium nitride single crystal substrate into chips by cleaving along the scribed lines and obtaining light emitting device chips having sides consisting of {1-100} planes made by natural cleavage.