NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device is provided to improve current diffusion and distribution by employing electrode shapes suitable for a rectangular plane of the nitride semiconductor light emitting device. An n-type nitride semiconductor layer(32) is formed on an upper surface of a substrate. An n-side electrode is comprised of an n-side bonding pad(37a) and an n-side electrode branch(37b). The n-side bonding pad is formed by being adjacent to an edge of an upper surface of the n-type nitride semiconductor layer. The n-side electrode branch is extended from the n-side bonding pad. A mesa structure is comprised of an active layer and a p-type nitride semiconductor layer(34) being sequentially stacked on the n-type nitride semiconductor layer where the n-type electrode is not formed. An ohmic contact layer(35) is formed on the p-type nitride semiconductor layer. A p-side electrode(36) is formed on the ohmic contact layer and comprised of a p-side bonding pad(36a) and a p-type electrode branch(36b). The p-side bonding pad is formed by being adjacent to a center of a short side where the edge adjacent to the n-side bonding pad is not comprised. The p-side electrode branch is extended from the p-side bonding pad.